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Power Transistors
2SD1751
Silicon NPN triple diffusion planar type
Unit: mm
s Features
q q
10.0 -0.
+0.3
7.20.3
0.80.2
For power amplification Complementary to 2SB1170
7.00.3 3.00.2
3.50.2
1.10.1
0.850.1 0.40.1
q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings 60 60 6 4 2 15 1.3 150 -55 to +150 Unit V
1.00.2
0.750.1
2.30.2 4.60.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.50.2 2.00.2
7.00.3
Unit: mm
0 to 0.15
3.00.2
10.20.3 7.20.3
V A A
1.0 max.
2.5
0.750.1 1.10.1
0.5 max.
0.90.1 0 to 0.15
W
1 2 3
C C
2.30.2 4.60.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25C)
Symbol ICES ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf IC = 1A, IB1 = 0.1A, IB2 = - 0.1A Conditions VCE = 60V, VBE = 0 VCE = 30V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 0.1A VCE = 4V, IC = 1A VCE = 4V, IC = 1A IC = 2A, IB = 0.2A VCE = 10V, IC = 0.5A, f = 1MHz 20 0.2 3.5 0.7 60 35 70 250 1.2 2 V V MHz s s s min typ max 200 300 1 Unit A A mA V
FE2
Rank classification
Q 70 to 150 P 120 to 250
Rank hFE2
2.50.2
1.0
2.50.2
V
1.0
1
Power Transistors
PC -- Ta
20 5 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25C 5 IB=100mA 80mA 3 50mA 40mA 2 30mA 20mA 1 (2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 10mA 5mA 1mA 0 0 0.5 1.0 1.5 25C
2SD1751
IC -- VCE
6 VCE=4V
IC -- VBE
Collector power dissipation PC (W)
Collector current IC (A)
15
Collector current IC (A)
(1)
4
TC=100C 4
-25C
10
3
2
5
1
2.0
2.5
3.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100C 25C 10000
hFE -- IC
1000 VCE=4V 300 100 30 10 3 1 0.3 0.1 0.01 0.03
fT -- IC
VCE=10V f=1MHz TC=25C
Forward current transfer ratio hFE
1000 300 100 30 10 3 1 0.01 0.03 TC=100C 25C -25C
-25C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency fT (MHz)
3000
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
100 30 103 Non repetitive pulse TC=25C
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
10 ICP 3 IC 1 300ms 0.3 0.1 0.03 0.01 1 3 10 30
t=10ms
102
(1) (2)
1ms
10
1
100
300
1000
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2

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